- Manufacture :
- Series :
- Packaging :
- Input Type :
- Operating Temperature :
- Supplier Device Package :
- Voltage - Supply :
- Channel Type :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
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13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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25,860
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|
Maxim Integrated | IC MOSFET DRVR 4A DUAL 8SOIC | - | Active | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4 V ~ 14 V | Independent | Low-Side | 2 | IGBT, SiC MOSFET | 2V, 4.25V | 4A, 4A | 40ns, 25ns | |||
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13,900
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|
Maxim Integrated | IC MOSFET DRVR 4A DUAL 8UMAX | - | Active | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP | 4 V ~ 14 V | Independent | Low-Side | 2 | IGBT, SiC MOSFET | 2V, 4.25V | 4A, 4A | 40ns, 25ns | |||
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GET PRICE |
65,280
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|
Maxim Integrated | IC MOSFET DRVR 4A DUAL 8TDFN | - | Active | Digi-Reel® | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 4 V ~ 14 V | Independent | Low-Side | 2 | IGBT, SiC MOSFET | 2V, 4.25V | 4A, 4A | 40ns, 25ns | ||
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69,640
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|
Maxim Integrated | IC MOSFET DRVR 4A DUAL 8TDFN | - | Active | Cut Tape (CT) | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 4 V ~ 14 V | Independent | Low-Side | 2 | IGBT, SiC MOSFET | 2V, 4.25V | 4A, 4A | 40ns, 25ns | |||
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22,300
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|
Maxim Integrated | IC MOSFET DRVR 4A DUAL 8TDFN | - | Active | Tape & Reel (TR) | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 4 V ~ 14 V | Independent | Low-Side | 2 | IGBT, SiC MOSFET | 2V, 4.25V | 4A, 4A | 40ns, 25ns | |||
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66,540
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|
Maxim Integrated | IC MOSFET DRVR 4A DUAL 8SOIC | - | Active | Tape & Reel (TR) | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4 V ~ 14 V | Independent | Low-Side | 2 | IGBT, SiC MOSFET | 2V, 4.25V | 4A, 4A | 40ns, 25ns | |||
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54,980
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|
Maxim Integrated | IC MOSFET DRVR 4A DUAL 8UMAX | - | Active | Tape & Reel (TR) | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP | 4 V ~ 14 V | Independent | Low-Side | 2 | IGBT, SiC MOSFET | 2V, 4.25V | 4A, 4A | 40ns, 25ns | |||
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GET PRICE |
25,220
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|
Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | Automotive, AEC-Q101 | Active | Digi-Reel® | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 40V (Max) | Single | Low-Side | 1 | IGBT, SiC MOSFET | - | 10A, 10A | 48ns, 35ns | ||
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15,740
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|
Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 40V (Max) | Single | Low-Side | 1 | IGBT, SiC MOSFET | - | 10A, 10A | 48ns, 35ns | |||
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13,840
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|
Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 40V (Max) | Single | Low-Side | 1 | IGBT, SiC MOSFET | - | 10A, 10A | 48ns, 35ns | |||
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GET PRICE |
17,080
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|
Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | - | Active | Digi-Reel® | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 40V (Max) | Single | Low-Side | 1 | IGBT, SiC MOSFET | - | 10A, 10A | 48ns, 35ns | ||
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75,040
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|
Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | - | Active | Cut Tape (CT) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 40V (Max) | Single | Low-Side | 1 | IGBT, SiC MOSFET | - | 10A, 10A | 48ns, 35ns | |||
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38,780
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|
Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | - | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 40V (Max) | Single | Low-Side | 1 | IGBT, SiC MOSFET | - | 10A, 10A | 48ns, 35ns |
