Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP2M013A050F
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RFQ
44,240
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Global Power Technologies Group MOSFET N-CH 500V 13A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 52W (Tc) N-Channel 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 5V @ 250µA 35nC @ 10V 1798pF @ 25V 10V ±30V
GP1M013A050H
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RFQ
59,900
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Global Power Technologies Group MOSFET N-CH 500V 13A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 183W (Tc) N-Channel 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 36nC @ 10V 1918pF @ 25V 10V ±30V
GP1M013A050FH
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RFQ
79,600
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Global Power Technologies Group MOSFET N-CH 500V 13A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 52W (Tc) N-Channel 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 36nC @ 10V 1918pF @ 25V 10V ±30V
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